SSM6J206FE 2007-11-01 1 toshiba field-effect transistor silicon p-channel mos type SSM6J206FE power management switch applications high-speed switching applications ? 1.8 v drive ? low on-resistance: r on = 320 m ? (max) (@v gs = -1.8 v) r on = 186 m ? (max) (@v gs = -2.5 v) r on = 130 m ? (max) (@v gs = -4.0 v) absolute maximum ratings (ta = 25 ? c) characteristic symbol rating unit drain?source voltage v ds -20 v gate?source voltage v gss 8 v dc i d -2 drain current pulse i dp -4 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v (br) dss i d = -1 ma, v gs = 0 -20 ? ? drain?source breakdown voltage v (br) dsx i d = -1 ma, v gs = +8 v -12 ? ? v drain cutoff current i dss v ds = -20 v, v gs = 0 ? ? -10 a gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -1 a (note 2) 2.4 4 ? s i d = -1.0 a, v gs = -4 v (note 2) ? 91 130 i d = -0.5 a, v gs = -2.5 v (note 2) ? 130 186 drain?source on-resistance r ds (on) i d = -0.2 a, v gs = -1.8 v (note 2) ? 180 320 m input capacitance c iss v ds = -10 v, v gs = 0, f = 1 mhz ? 335 ? pf output capacitance c oss v ds = -10 v, v gs = 0, f = 1 mhz ? 70 ? pf reverse transfer capacitance c rss v ds = -10 v, v gs = 0, f = 1 mhz ? 56 ? pf turn-on time t on ? 20 ? switching time turn-off time t off v dd = -10 v, i d = -1 a, v gs = 0 to -2.5 v, r g = 4.7 ? 20 ? ns drain?source forward voltage v dsf i d = 2 a, v gs = 0 (note 2) ? 0.85 1.2 v note 2: pulse test unit: mm jedec D jeita D toshiba 2-2n1a weight: 3 mg (typ.) es6 1, 2, 5, 6 : drain 3 : gate 4 : source
SSM6J206FE 2007-11-01 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on usage v th can be expressed as the voltage between gate and s ource when the low operating current value is i d = -1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on) . ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = ? 10 v r g = 4.7 duty Q 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 2.5v 10 s v dd out r g r l t on 90% 10% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd 6 kr 4 1 2 3 5 4 123 6 5
SSM6J206FE 2007-11-01 3 id - vds 0 -1 -2 -3 -4 -5 0 -0.2 -0.4 -0.6 -0.8 -1 drain-source voltage vds (v) drain current id (a) vgs = -1.2 v -1.5 -10 -4 -1.8 -2.5 common source ta = 25 id - vgs -0.0001 -0.001 -0.01 -0.1 -1 -10 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 gate-source voltage vgs (v) drain current id (a) ta = 85 -25 25 common source vds = -3 v rds (on) - vgs 0 100 200 300 012345678910 gate-source voltage vgs (v) drain-source on-resistance rds (on)(m) common source ta = 25 id = -1 a -0.5 a -0.2 a rds (on) - id 0 50 100 150 200 250 300 0 - 1- 2- 3- 4- 5 drain current id (a) drain-source on-resistance rds (on) (m) common source ta = 25 vgs = -1.8 v -4 v -2.5 v rds (on) - ta 0 50 100 150 200 250 300 -60-35-1015406590115140 ambient temperature ta () drain-source on-resistance rds (on)() vgs = -4 v, id = -1 a -2.5 v, -0.5 a -1.8 v, -0.2 a common source vth - ta -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -25 0 25 50 75 100 125 150 ambient temperature ta () gate threshold voltage vth(v) common source id = -1 ma vds = -3 v
SSM6J206FE 2007-11-01 4 pd - ta 0 200 400 600 800 1000 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) drain power dissipation pd (mw) mounted on an fr4 board (25.4mm25.4mm1.6mm) cu pad :25.4mm25.4mm c - vds 10 100 1000 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss common source vgs = 0 v f = 1 mhz ta = 25 |yfs| - id 0.1 1 10 -0.01 -0.1 -1 -10 drain current id (a) forward transfer admittance |yfs| (s) ta = 85 -25 25 common source vds = -3 v ta = 25 idr - vds 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 drain-source voltage vds (v) drain reverse current idr (a ) ta = 85 25 -25 common source vgs = 0 ta = 25 t - id 1 10 100 1000 0.01 0.1 1 10 drain current id (a) switching time t (ns ) common source vdd = -10 v vgs = 0 to -2.5 v ta = 25 toff tf ton tr
SSM6J206FE 2007-11-01 5 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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